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GenX3TM 600V IGBTs
Medium-Speed-Low-Vsat PT IGBTs for 5-40kHz Switching
IXGK120N60B3 IXGX120N60B3
VCES IC110 VCE(sat) tfi(typ)
TO-264 (IXGK)
= = =
600V 120A 1.8V 145ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C (Chip Capability) TC = 110C Terminal Current Limit TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 2 Clamped Inductive Load TC = 25C
Maximum Ratings 600 600 20 30 280 120 160 600 ICM = 300 VCE VCES 780 -55 ... +150 150 -55 ... +150 V V V V A A A A A W C C C C C Nm/lb.in. N/lb. g g G = Gate C = Collector Features Optimized for Low Conduction and Switching Losses Square RBSOA High Current Handling Capability International Standard Packages Advantages High Power Density Low Gate Drive Requirement Applications E = Emitter Tab = Collector PLUS247TM (IXGX)
G C E
Tab
G
C
E
Tab
Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Mounting Torque (IXGK) Mounting Force (IXGX) TO-264 PLUS247
300 260 1.13/10 20..120/4.5..27 10 6
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250A, VGE= 0V = 500A, VCE = VGE TJ = 125C VCE = 0V, VGE = 20V IC = 100A, VGE = 15V, Note 1
Characteristic Values Min. Typ. Max. 600 3.0 5.0 V V
VCE = VCES, VGE = 0V
50 A 3 mA 100 1.5 1.8 nA V
Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts
(c) 2010 IXYS CORPORATION, All Rights Reserved
DS99993A(09/10)
IXGK120N60B3 IXGX120N60B3
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS Inductive load, TJ = 125C IC = 100A, VGE = 15V VCE = 480V, RG = 2 Note 2 IC = 120A, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 60A, VCE = 10V, Note 1 Characteristic Values Min. Typ. Max. 100 170 14.6 790 140 465 74 167 40 87 2.9 227 145 3.5 38 85 4.0 290 230 4.7 0.15 S nF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.16 C/W C/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-264 AA ( IXGK) Outline
Terminals:
Back Side
1 = Gate 2,4 = Collector 3 = Emitter
Inductive load, TJ = 25C IC = 100A, VGE = 15V VCE = 480V, RG = 2 Note 2
PLUS247TM (IXGX) Outline
Notes:
1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
Terminals:
1 - Gate 2 - Collector 3 - Emitter
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
6,404,065 B1 6,534,343 6,583,505
Millimeter Min. Max. 4.83 2.29 1.91 1.14 1.91 2.92 5.21 2.54 2.16 1.40 2.13 3.12
Inches Min. Max. .190 .090 .075 .045 .075 .115 .205 .100 .085 .055 .084 .123
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1
0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
.024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
7,157,338B2
6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
IXGK120N60B3 IXGX120N60B3
Fig. 1. Output Characteristics @ T J = 25C
200 180 160 140 VGE = 15V 11V 9V 350 300 250 VGE = 15V 11V 9V
Fig. 2. Extended Output Characteristics @ T J = 25C
IC - Amperes
IC - Amperes
120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
7V
200 150 100 50
7V
5V 0 2 2.2 0 1 2
5V 3 4 5 6 7 8 9 10
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ T J = 125C
200 180 160 140 VGE = 15V 11V 9V 1.4 1.3 VGE = 15V
Fig. 4. Dependence of VCE(sat) on Junction Temperature
I
C
= 200A
120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 5V
VCE(sat) - Normalized
7V
1.2 1.1 I 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 I
C C
IC - Amperes
= 100A
= 50A
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
4.0 TJ = 25C 180 160 140
Fig. 6. Input Admittance
3.5
VCE - Volts
C
IC - Amperes
3.0
I
2.5
= 200A 100A 50A
120 100 80 60 40
TJ = 125C 25C - 40C
2.0
1.5 20 1.0 5 6 7 8 9 10 11 12 13 14 15 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
VGE - Volts
VGE - Volts
(c) 2010 IXYS CORPORATION, All Rights Reserved
IXGK120N60B3 IXGX120N60B3
Fig. 7. Transconductance
300 270 240 210 12 25C 125C 150 120 90 4 60 30 0 0 20 40 60 80 100 120 140 160 180 200 2 0 0 50 100 150 200 250 300 350 400 450 500 TJ = - 40C 16 14 VCE = 300V I C = 120A I G = 10mA
Fig. 8. Gate Charge
g f s - Siemens
180
VGE - Volts
10 8 6
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
100,000 350
Fig. 10. Reverse-Bias Safe Operating Area
f = 1 MHz
Cies 300 250
Capacitance - PicoFarads
10,000
IC - Amperes
1,000
Coes
200 150 100
100
TJ = 125C RG = 2 dV / dt < 10V / ns
Cres
50 0 200
10 0 5 10 15 20 25 30 35 40
250
300
350
400
450
500
550
600
650
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
Z(th)JC - C / W
0.1
0.01
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGK120N60B3 IXGX120N60B3
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
8 7 6 Eoff VCE = 480V Eon 7 8 7 6 Eoff VCE = 480V Eon
Fig. 13. Inductive Switching Energy Loss vs. Collector Current
4.5
---
TJ = 125C , VGE = 15V
6 5
----
4.0 3.5
RG = 2 , VGE = 15V
E on - MilliJoules
E on - MilliJoules
E off - MilliJoules
E off - MilliJoules
5 4 TJ = 125C 3 2 1 0 50 55 60 65 70 75 80 85 90 95 TJ = 25C
3.0 2.5 2.0 1.5 1.0 0.5 100
5 I 4 3 2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
C
4 = 100A 3 2 1 0
I C = 50A
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
8 7 6 Eoff VCE = 480V Eon 4.5 260 250 240
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
1100
----
RG = 2 , VGE = 15V
4.0 3.5
tfi
VCE = 480V
td(off) - - - -
1000 900
TJ = 125C, VGE = 15V
t d(off) - Nanoseconds
t f i - Nanoseconds
E off - MilliJoules
5 4 3 2 1 0 25 35 45 55 65 75 85 95 105 115 I C = 100A
3.0 2.5 2.0 1.5 1.0 0.5 125
230 I 220 210 200 190 180 170 2 3 4 5 6 7 8 9 10 11 12 13 14 15 I
C C
800 = 100A 700 600 = 50A 500 400 300 200
E on - MilliJoules
I C = 50A
TJ - Degrees Centigrade
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
260 240 220 360 260 240 220
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
340 340 320 300
tfi
VCE = 480V
td(off) - - - -
RG = 2 , VGE = 15V
tfi
VCE = 480V I
td(off) - - - -
320 300 280 260 240 220
RG = 2 , VGE = 15V
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f i - Nanoseconds
200 180 160 140 120 100 50 55 60 65 70 75 80 85 90 95 TJ = 25C TJ = 125C
t f i - Nanoseconds
200 180 160 140 120 100 25 35
C
= 100A, 50A
280 260 240 220 200 100
I C = 50A
200 180 125
45
55
65
75
85
95
105
115
IC - Amperes
TJ - Degrees Centigrade
(c) 2010 IXYS CORPORATION, All Rights Reserved
IXGK120N60B3 IXGX120N60B3
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
160 140 120 100 80 60 40 20 2 3 4 5 6 7 8 9 10 11 12 13 14 15 I
C
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
140 100 90 44
tri
VCE = 480V
td(on) - - - -
120
tri
VCE = 480V
td(on) - - - -
TJ = 125C, VGE = 15V
RG = 2 , VGE = 15V
42
t d(on) - Nanoseconds
t d(on) - Nanoseconds
t r i - Nanoseconds
t r i - Nanoseconds
100 80
80 70 60 50 40 30 50
40 TJ = 25C, 125C 38 36 34 32 30 100
= 100A
I
C
= 50A
60 40 20 0
55
60
65
70
75
80
85
90
95
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
140 120 100 80 60 40 20 0 25 35 45 55 65 75 85 95 105 115 I = 50A 44
tri
VCE = 480V
td(on) - - - -
RG = 2 , VGE = 15V
42
t d(on) - Nanoseconds
t r i - Nanoseconds
40 38 36 34 32 30 125
I C = 100A
C
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_120N60B3(86)9-09-10-A

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